G8MNY > TECH 14.03.24 10:30z 48 Lines 1834 Bytes #186 (0) @ WW BID : 3255_GB7CIP Read: GUEST Subj: Transistor PA Biasing Path: ED1ZAC<ED1ZAC<GB7CIP Sent: 240314/1012Z @:GB7CIP.#32.GBR.EURO #:3255 [Caterham Surrey GBR] $:3255_GB From: G8MNY@GB7CIP.#32.GBR.EURO To : TECH@WW By G8MNY (Updated May 17) (8 Bit ASCII graphics use code page 437 or 850, Terminal Font) Here is a simple circuit that can deliver the peak base current needed for linear SSB operation, that works very well. It uses 2 TIP type NPN transistors, 3 Rs, & suitable RF filtering for the band in use. T1 must be bolted close to the PA devices so that it's emitter base voltage can tracks the PA temperature, the base is protected from RF with a ferrite bead. T2 needs heat sinking so it is also convenient to mount it on close to T1. Bias adjustment can be done by adjusting the 470R, but never change it just for a preset without a safe minimum series R! PTT Switched +12V ÄÄÂÄÄÄÂÄÄÄÄÄÄÄÄÄÄÄ¿ ³ ³ 10R 10W ³ 470R T2 ³ 10u ³+ ³ ³/c === ÃÄÄÄÄÄÄÄÄÄ´TIP ³ ³ NPN³\e +570mV ³ ³ T1 ÃÄÄÄÄÂÄÄÄÂÄÄÄ RFC to PA ³ c\³ ³ ³ ³ Bases ³ ÃÄÄFBÄÄÄÄÄ´ ³ +³ ³ e/³ NPN 5R6 === === ³ ³ ³ 1n³ ³10u 0V ÄÄÄÁÄÄÄÁÄÄÄÄÄÄÄÄÄÄÄÁÄÄÄÄÁÄÄÄÁÄÄÄÄ The MAX base current, about 1A is available, this is limited by the 10R & should be enough current for a 50W UHF or 100W VHF or 200W HF PA. The difference in power is because bipolar transistors have 2 gain figures, the DC gain HFE (also called Beta) & the much smaller AC gain Hfe at the frequency of operation. The bias current needed is Hfe mode, where the gain for most RF transistors drops from a DC HFE of up to a 100, down to below single figures like Hfe of 0.1 to 5 @ RF! Even at 1 there still as lot of power gain, due to the voltage swing difference. See my Tech Bul on "AF 2 Tone Test Osc Design" Why Don't U send an interesting bul? 73 De John, G8MNY @ GB7CIP
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